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| VCES Low VCE(sat) IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A IC25 VCE(sat) 3.5 V 4.0 V 1000 V 20 A 1000 V 20 A Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 150 Clamped inductive load, L = 300 H TC = 25C Maximum Ratings 1000 1000 20 30 20 10 40 ICM = 20 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features l l l Mounting torque (M3) 1.13/10 Nm/lb.in. l 6 300 g C l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125C) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25C TJ = 125C 5 250 1 100 10N100 10N100A 3.5 4.0 V V A mA nA V V Applications l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 A, VCE = VGE l l AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages l l Easy to mount with 1 screw (isolated mounting screw hole) High power density (c) 1996 IXYS All rights reserved 93004D (3/96) IXGH 10N100 IXGH 10N100A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 8 750 S pF pF pF 70 25 45 nC nC nC ns ns 900 ns ns ns 3 mJ ns ns mJ 1000 2000 1000 ns ns ns mJ mJ 1.2 K/W 0.25 K/W TO-247 AD Outline gfs Cies Coes Cres Qg Q ge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = I C90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz 150 30 52 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 VCES , RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 V CES, RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 10N100 10N100A 10N100 10N100A 10N100 10N100A 10N100A 13 24 100 200 550 800 500 2 100 200 1.1 600 1250 950 5.0 2.5 1 = Gate 2 = Collector 3 = Emitter Tab = Collector IXGH 10N100 and IXGH 10N100A characteristic curves are located on the IXGH 10N100U1 and IXGH 10N100AU1 data sheets. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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